<ruby id="bdb3f"></ruby>

    <p id="bdb3f"><cite id="bdb3f"></cite></p>

      <p id="bdb3f"><cite id="bdb3f"><th id="bdb3f"></th></cite></p><p id="bdb3f"></p>
        <p id="bdb3f"><cite id="bdb3f"></cite></p>

          <pre id="bdb3f"></pre>
          <pre id="bdb3f"><del id="bdb3f"><thead id="bdb3f"></thead></del></pre>

          <ruby id="bdb3f"><mark id="bdb3f"></mark></ruby><ruby id="bdb3f"></ruby>
          <pre id="bdb3f"><pre id="bdb3f"><mark id="bdb3f"></mark></pre></pre><output id="bdb3f"></output><p id="bdb3f"></p><p id="bdb3f"></p>

          <pre id="bdb3f"><del id="bdb3f"><progress id="bdb3f"></progress></del></pre>

                <ruby id="bdb3f"></ruby>

                ThinkChat2.0新版上線,更智能更精彩,支持會話、畫圖、視頻、閱讀、搜索等,送10W Token,即刻開啟你的AI之旅 廣告
                Latch up 是指[cmos](https://baike.baidu.com/item/cmos)晶片中,在電源power VDD和[地線](https://baike.baidu.com/item/%E5%9C%B0%E7%BA%BF/9752703)GND(VSS)之間由于寄生的[PNP](https://baike.baidu.com/item/PNP)和NPN雙極性BJT相互影響而產生的一低阻抗通路。它的存在會使VDD和GND之間產生大電流。 隨著IC制造工藝的發展, 封裝密度和集成度越來越高,產生Latch up的可能性會越來越大。 Latch up 產生的過度電流量可能會使芯片產生永久性的破壞, Latch up 的防范是IC Layout 的最重要措施之一
                  <ruby id="bdb3f"></ruby>

                  <p id="bdb3f"><cite id="bdb3f"></cite></p>

                    <p id="bdb3f"><cite id="bdb3f"><th id="bdb3f"></th></cite></p><p id="bdb3f"></p>
                      <p id="bdb3f"><cite id="bdb3f"></cite></p>

                        <pre id="bdb3f"></pre>
                        <pre id="bdb3f"><del id="bdb3f"><thead id="bdb3f"></thead></del></pre>

                        <ruby id="bdb3f"><mark id="bdb3f"></mark></ruby><ruby id="bdb3f"></ruby>
                        <pre id="bdb3f"><pre id="bdb3f"><mark id="bdb3f"></mark></pre></pre><output id="bdb3f"></output><p id="bdb3f"></p><p id="bdb3f"></p>

                        <pre id="bdb3f"><del id="bdb3f"><progress id="bdb3f"></progress></del></pre>

                              <ruby id="bdb3f"></ruby>

                              哎呀哎呀视频在线观看